Antiferroelectric thin film energy storage

Temperature-dependent energy storage properties of antiferroelectric ...

The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (Ure) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature …

Tailoring energy-storage performance in antiferroelectric PbHfO3 thin films …

Among all dielectrics, antiferroelectric (AFE) materials have attracted wide attention due to the excellent energy-storage performance. In this paper, PbHfO 3 (PHO) AFE films were prepared for the first time and the microstructure, AFE property and energy-storage performance were studied. ...

Energy storage and dielectric properties in PbZrO3/PbZrTiO3 ...

This recoverable energy value for our bulk PZ/PZT bilayer film is much higher than those measured in experiments for the PZ/PZT thin film bilayer structure. 19,20 This significant recoverable energy value holds potential for specific large-scale, long-term energy storage applications.

Effect of Sn4+ doping on antiferroelectric and energy storage ...

Antiferroelectric materials possess excellent energy storage capacity, fatigue resistance, and high thermal stability. This study successfully prepared PbHf 1-x Sn x O 3 (x = 0.5%, 1.0%, 1.5%, 2.0%, abbreviated as PHS-100x) antiferroelectric thin films on fluorine-doped tin oxide (FTO)/glass substrates using the sol-gel method.The polarization …

Self-polarization and energy storage performance in antiferroelectric ...

The linear polymer, such as BOPP (4, 82%), usually exhibit higher η and low W rev, and the opposite situation can be found in polymer-based ferroelectric films. Especially, the energy storage performances of PZO/AO/PZO multilayer films is much superior to that of reported antiferroelectric thin films, both excellent W rev and η are …

Antiferroelectric Thin-Film Capacitors with High Energy-Storage ...

Polarization switching and energy-storage performance of the PYZST thin-film capacitors: (a) bipolar P−E hysteresis loops of the PYZST thin-film at an electric field of 200 kV/cm, demonstrating ...

Ferroelectric/paraelectric superlattices for energy storage

Several works have found or predicted antiferroelectricity in electrostatically frustrated perovskite oxides. Antiferroelectric phases were measured in KNbO 3 /KTaO 3 and SrTiO 3 /BaZrO 3 superlattices, although the former present scant thermal stability and the latter display antiferroelectricity for very thin layers.Theoretical works have predicted …

Temperature-dependent antiferroelectric properties in La3

Antiferroelectric thin films have attracted blooming interest due to their potential application in energy storage areas. Pb(1−3x/2)LaxHfO3 (PLHO-x, x = 0–0.05) thin films were fabricated on Pt(111)/TiO2/SiO2/Si substrates via the chemical solution deposition method. The x-ray diffraction and high-resolution transmission electron …

Thin Solid Films

Antiferroelectric PbZrO 3 (PZO) thin-films were fabricated by pulsed laser deposition (PLD) and sol-gel techniques to investigate the effect of antiferroelectric-ferroelectric (AFE-FE) phase transition on the energy storage performance. The (100)-oriented PLD thin-films have a square-double polarization-electric field (P-E) hysteresis …

Ultra-high energy storage density and scale-up of antiferroelectric …

Antiferroelectric (AFE) HfO2/ZrO2-based thin films have recently emerged as a potential candidate for high-performance energy storage capacitors in miniaturized power …

AgNbO3 antiferroelectric film with high energy storage performance

Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power …

Thin films of relaxor ferroelectric/antiferroelectric heterolayered ...

A large recoverable energy-storage density (U reco) of 23.2J/cm³ and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher ...

PbZrO3‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy ...

During the past decade, numerous studies have been reported to develop high-performance PZ-based anti-ferroelectric thin films for electrical energy storage applications. This review focuses on the recent progress of PZ-based anti-ferroelectric films for energy storage, and provides various ways, such as element modification ...

Superior Energy Storage Performance in Antiferroelectric Epitaxial Thin ...

Herein, by engineering the nanoscale heterogeneity to mitigate hysteresis and controlling orientation to enhance the polarization, the exceptional energy storage performance of antiferroelectric (Pb 0.97 La 0.02)(Zr 0.55 Sn 0.45)O 3 epitaxial thin films is demonstrated. Atomic-resolution transmission electron microscopy and X-ray reciprocal ...

Phase stability and energy storage properties of polycrystalline ...

The energy storage densities of the thin film samples were calculated from the bipolar hysteresis loops and averaged over the area from the positive and negative fields. ... Unipolar and bipolar fatigue in antiferroelectric lead zirconate thin films and evidences for switching-induced charge injection inducing fatigue. Appl. Phys. Lett., vol ...

Temperature-dependent antiferroelectric properties in La3

Antiferroelectric thin films have attracted blooming interest due to their potential application in energy storage areas. Pb(1−3x/2)LaxHfO3 (PLHO-x, x = 0–0.05) thin films were fabricated on ...

Superior Energy Storage Performance in Antiferroelectric …

A synergistic approach is proposed to achieve state-of-the-art energy storage performance in antiferroelectric thin films, involving the engineering of …

Temperature-dependent antiferroelectric properties in La3

Antiferroelectric thin films have attracted blooming interest due to their potential application in energy storage areas. Pb (1−3x/2) La x HfO 3 (PLHO- x, x = …

High-entropy enhanced capacitive energy storage

High-entropy enhanced capacitive energy storage

Energy storage performance and piezoelectric response of silver …

AgNbO 3-based antiferroelectric materials have attracted extensive attention in energy storage due to their double polarization-electric field hysteresis loops, but they always suffer from low breakdown strength (E b) lms with few defects and small thickness exhibit high breakdown strength, which helps to improve energy storage …

Room-temperature stabilizing strongly competing ferrielectric and ...

Room-temperature stabilizing strongly competing ...

PbZrO 3 -Based Anti-Ferroelectric Thin Films for High …

This review focuses on the recent progress of PZ-based anti-ferroelectric films for energy storage, and provides various ways, such as element modification …

Effect of annealing temperature on energy storage performance …

6 · Using the radio frequency magnetron sputtering process, NaNbO3-based antiferroelectric thin films were obtained on Pt(111)/Ti/SiO2/Si substrates. The effects of …

Tailoring high-energy storage NaNbO 3 -based materials from antiferroelectric …

Tailoring high-energy storage NaNbO 3 -based materials ...

PbZrO3‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy ...

Energy storage capacitors occupy a large proportion in the pulse power equipment, and they play an important role nowadays. In recent years, anti‐ferroelectric materials have attracted increasing attention of researchers due to their high energy storage density. Compared with the lead‐free anti‐ferroelectric materials, PbZrO3 …

Energy storage performance and piezoelectric response of silver niobate antiferroelectric thin film …

AgNbO 3-based antiferroelectric materials have attracted extensive attention in energy storage due to their double polarization-electric field hysteresis loops, but they always suffer from low breakdown strength (E b) lms with few defects and small thickness exhibit ...

Antiferroelectric Thin-Film Capacitors with High Energy-Storage …

We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb 0.97 Y 0.02 [(Zr 0.6 Sn 0.4) 0.925 Ti …

Improved energy storage performance of PbZrO3 antiferroelectric thin ...

The PbZrO 3 films show a recoverable energy storage density of 14.8 J cm −3 at 740 kV cm −1, which is approximately 40% higher than that of the PbZrO 3 films crystallized by ordinary heating. The results reveal that microwave radiation is an effective method to improve energy storage performance of antiferroelectric films.

High Energy Storage Performance of All-Inorganic Flexible …

The results demonstrate that the AO/PZO/AO/PZO/AO (APAPA) multilayered thin film possesses a greatly improved energy storage density (W rec) of …

Temperature-dependent energy storage properties of antiferroelectric ...

The energy storage properties of antiferroelectric (AFE) Pb 0.96 La 0.04 Zr 0.98 Ti 0.02 O 3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (U re) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from …

Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible ...

Dielectric capacitors are widely studied for power supply systems because they can quickly store and release electrical energy. Among various kinds of dielectric materials, antiferroelectrics show promising features of high energy‐storage density and efficiency. In this study, epitaxial antiferroelectric PbHfO3 films with different …

Antiferroelectric Thin-Film Capacitors with High Energy-Storage ...

Antiferroelectric Thin-Film Capacitors with High Energy ...

Temperature-dependent antiferroelectric properties in La3+ doped PbHfO3 thin films with enhanced energy storage …

Antiferroelectric thin films have attracted blooming interest due to their potential application in energy storage areas. Pb(1−3x/2)LaxHfO3 (PLHO-x, x = 0–0.05) thin films were fabricated on Pt(111)/TiO2/SiO2/Si substrates via the chemical solution deposition method. The x-ray diffraction and high-resolution transmission electron …

Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy …

PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 °C and also exhibited strong charge-discharge fatigue endurance up to 1 × 10(7) cycles. We demonstrate a capacitor with high energy densities, low energy losses, fast discharge …

Tailoring high-energy storage NaNbO3-based materials from

Reversible field-induced phase transitions define antiferroelectric perovskite oxides and lay the foundation for high-energy storage density materials, required for future green technologies.

High energy storage performance in Ca-doped PbZrO3 antiferroelectric films

In this work, antiferroelectric Pb 1-x Ca x ZrO 3 (PCZ) thin films with different concentrations of Ca 2+ were prepared by chemical solution deposition, and the effects of Ca 2+ concentration on the antiferroelectric properties and energy storage performance were investigated. The results show that the optimal Ca 2+ concentration in …

Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible Energy Storage

Dielectric capacitors are widely studied for power supply systems because they can quickly store and release electrical energy. Among various kinds of dielectric materials, antiferroelectrics show promising features of high energy‐storage density and efficiency. In this study, epitaxial antiferroelectric PbHfO3 films with different …

Recent development of lead-free relaxor ferroelectric and …

It begins with a brief outline on the significance of thin films in energy storage applications, followed by summarizing the importance of RFE and AFE materials. …

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